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| 2SC4995 Silicon NPN Epitaxial REJ03G0194-0300Z (Previous ADE-208-013A (Z) ) Rev.3.00 Apr.05.2004 Application VHF / UHF wide band amplifier Features * High gain bandwidth product fT = 11 GHz Typ. * High gain, low noise figure PG = 16.5 dB Typ. , NF = 1.1 dB Typ. at f = 900 MHz Outline CMPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter Note: Marking is "YD-". Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Rev.3.00, Apr.05.2004, page 1 of 9 2SC4995 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 100 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Symbol Min 15 -- -- -- 50 -- 8.0 -- 13.5 -- Typ -- -- -- -- 120 0.55 11.0 16 16.5 1.1 Max -- 10 1 10 250 1.1 -- -- -- 2.0 Unit V A mA A pF GHz dB dB dB Test Conditions IC = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 1000 MHz VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Collector to base breakdown voltage V(BR)CBO Collector cutoff current ICBO ICEO Emitter cutoff current IEBO DC current transfer ratio hFE Collector output capacitance Cob Gain bandwidth product fT S21 Parameter |S21| Power gain Noise figure PG NF Rev.3.00, Apr.05.2004, page 2 of 9 2SC4995 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) DC Current Transfer Ratio vs. Collector Current 120 100 80 60 40 20 200 DC Current Transfer Ratio h FE VCE = 5V 160 120 80 40 0 1 0 50 100 150 Ambient Temperature Ta (C) Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (pF) 2 5 10 20 Collector Current I C (mA) Collector Output Capacitance vs. Collector to Base Voltage 50 12 Gain Bandwidth Product f T (GHz) 0.9 VCE = 5 V 10 8 VCE = 1 V IE = 0 f = 1 MHz 0.8 0.7 6 4 2 0 0.6 0.5 0.4 0.5 1 2 5 10 20 Collector Current I C (mA) Power Gain vs. Collector Current 50 1 2 5 10 20 Collector to Base Voltage V CB (V) 20 VCE = 5V f = 900 MHz Power Gain PG (dB) NF (dB) Noise Figure vs. Collector Current 5 VCE = 5V f = 900MHz 16 4 12 3 8 Noise Figure 2 4 0 1 0 1 2 5 10 20 Collector Current I C (mA) 50 1 5 10 20 2 Collector Current I C (mA) 50 Rev.3.00, Apr.05.2004, page 3 of 9 2SC4995 S21 Parameter vs. Collector Current f = 1 GHz (dB) 20 16 VCE = 5V |S21 | 12 VCE = 1V S 21 Parameter 8 4 0 1 2 5 10 20 Collector Current I C (mA) 50 Rev.3.00, Apr.05.2004, page 4 of 9 2SC4995 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 180 0 150 30 S21 Parameter vs. Frequency 90 1 Scale: 5 / div. 60 1.5 2 120 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -150 -30 -1 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.04 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -2 -.6 -.8 -1 -1.5 -150 -30 -120 -90 -60 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Rev.3.00, Apr.05.2004, page 5 of 9 2SC4995 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 180 0 150 30 S21 Parameter vs. Frequency 90 1 Scale: 5 / div. 60 1.5 2 120 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -150 -30 -1 Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.04 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -2 -.6 -.8 -1 -1.5 -150 -30 -120 -90 -60 Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Rev.3.00, Apr.05.2004, page 6 of 9 2SC4995 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.781 0.669 0.591 0.549 0.524 0.520 0.515 0.518 0.523 0.537 ANG. -48.2 -83.6 -109.4 -129.1 -145.0 -156.8 -166.9 -176.0 176.5 170.1 S21 MAG. 12.84 10.04 7.84 6.30 5.23 4.45 3.86 3.44 3.11 2.82 ANG. 148.8 127.3 113.9 104.4 96.7 90.7 86.0 81.1 77.3 73.5 S12 MAG. 0.0449 0.0695 0.0815 0.0889 0.0937 0.0986 0.103 0.107 0.111 0.116 ANG. 64.6 50.3 42.6 39.2 38.4 37.7 38.7 40.0 41.2 42.4 S22 MAG. 0.866 0.682 0.541 0.446 0.381 0.340 0.309 0.287 0.268 0.256 ANG. -28.6 -46.9 -58.1 -65.2 -70.4 -74.6 -77.7 -81.2 -85.1 -89.0 S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.542 0.520 0.516 0.519 0.525 0.538 0.540 0.554 0.567 0.580 ANG. -69.9 -136.2 -156.3 -169.1 -179.2 173.6 167.5 161.6 159.5 151.7 S21 MAG. 24.74 15.31 10.81 8.29 6.70 5.63 4.85 4.29 3.86 3.48 ANG. 128.7 109.4 99.5 93.5 88.5 84.1 80.9 77.5 74.3 71.6 S12 MAG. 0.0296 0.0398 0.0470 0.0547 0.0624 0.0712 0.0805 0.0895 0.0991 0.109 ANG. 55.5 50.2 52.8 55.1 57.9 60.2 61.5 62.8 63.8 64.3 S22 MAG. 0.631 0.395 0.285 0.225 0.189 0.166 0.151 0.140 0.134 0.129 ANG. -52.5 -72.9 -83.6 -91.3 -97.5 -102.8 -107.9 -112.6 -118.1 -122.5 Rev.3.00, Apr.05.2004, page 7 of 9 2SC4995 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.739 0.643 0.603 0.586 0.578 0.580 0.588 0.596 0.607 0.617 ANG. -65.4 -106.5 -132.0 -148.7 -162.1 -171.9 179.9 172.9 166.8 161.0 S21 MAG. 11.99 8.54 6.34 4.99 4.08 3.45 2.99 2.67 2.41 2.20 ANG. 140.8 118.9 106.4 97.9 90.9 86.0 81.7 77.2 73.4 70.0 S12 MAG. 0.0681 0.0957 0.107 0.114 0.118 0.124 0.129 0.134 0.139 0.145 ANG. 56.9 41.5 34.9 32.6 32.6 32.7 33.3 34.3 35.9 36.9 S22 MAG. 0.793 0.576 0.446 0.369 0.323 0.396 0.275 0.263 0.256 0.254 ANG. -44.9 -72.1 -89.4 -101.9 -112.0 -120.1 -127.0 -133.0 -139.5 -144.7 S Parameter (VCE = 1 V, IC = 20 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.588 0.618 0.627 0.639 0.650 0.656 0.664 0.677 0.689 0.696 ANG. -127.7 -157.6 -171.4 179.6 172.1 -166.4 160.7 156.5 151.6 147.5 S21 MAG. 19.25 11.00 7.62 5.80 4.66 3.94 3.40 3.03 2.71 2.47 ANG. 119.0 102.5 94.6 89.2 84.5 81.1 78.2 75.2 71.9 69.2 S12 MAG. 0.0389 0.0483 0.0570 0.0662 0.0768 0.873 0.0996 0.110 0.122 0.134 ANG. 47.2 45.3 49.0 52.6 55.9 57.7 59.2 60.2 61.1 61.2 S22 MAG. 0.527 0.380 0.334 0.315 0.306 0.302 0.301 0.301 0.304 0.306 ANG. -86.7 -120.8 -139.3 -150.9 -158.9 -165.4 -170.5 -174.6 -178.4 178.2 Rev.3.00, Apr.05.2004, page 8 of 9 2SC4995 Package Dimensions As of January, 2003 Unit: mm 2.0 0.2 1.3 0.2 0.1 0.3 + 0.05 - 0.1 0.3 + 0.05 - 0.425 0.65 0.65 0.16- 0.06 + 0.1 1.25 0.1 2.1 0.3 0 - 0.1 0.2 0.9 0.1 0.65 0.6 1.25 0.2 0.425 0.1 0.3 + 0.05 - 0.1 0.4 + 0.05 - Package Code JEDEC JEITA Mass (reference value) CMPAK-4(T) -- Conforms 0.006 g Ordering Information Part Name 2SC4995 Quantity 3000 pcs Shipping Container 178 mm Taping Reel (TL) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Apr.05.2004, page 9 of 9 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0 |
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